A Novel High Schottky Barrier Based Bilateral Gate and Assistant Gate Controlled Bidirectional Tunnel Field Effect Transistor
نویسندگان
چکیده
منابع مشابه
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ژورنال
عنوان ژورنال: IEEE Journal of the Electron Devices Society
سال: 2020
ISSN: 2168-6734
DOI: 10.1109/jeds.2020.3020920